| PART |
Description |
Maker |
| SCS120PR |
VOLTAGE 20V ~ 40V 1.0 AMP Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| SCD12L SCD14L |
VOLTAGE 20V ~ 40V 1.0 AMP Low Vf Schottky Barrier Rectifier s
|
SeCoS Halbleitertechnologie GmbH
|
| FDG6332C FDG6332CNL |
Tantalum Molded Capacitor; Capacitance: 220uF; Voltage: 6.3V; Packaging: Tape & Reel 700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
20V N & P-Channel PowerTrench MOSFETs
20V N &P - Channel Power Trench MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| SCS501V-4011 |
Voltage 40V 0.1 Amp Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| SM340A SM320A SM320A12 SM360A |
Voltage 20V ~ 100V 3.0 Amp Surface Mount Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| LFM240-L |
2.0A Surface Mount Schottky Barrier Rectifiers-20V-40V
|
Formosa MS
|
| SL12-L |
1.0A LOW VF SCHOTTKY BARRIER RECTIFIERS-20V-40V SMA-LS PACKAGE
|
WILLAS ELECTRONIC CORP
|
| SL12-N |
1.0A LOW VF SCHOTTKY BARRIER RECTIFIERS-20V-40V SOD-323-L PACKAGE
|
WILLAS ELECTRONIC CORP
|
| 2SK404 2SK404F 2SK404E |
HF Amp, AF Amp Applications
TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 5MA I(DSS) | SPAK
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 20V的五（巴西）直| 2.5mA的我（直）| SPAK
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| ISL21009BMB841EP ISL21009CMB850EP ISL21009BMB850EP |
High Voltage Input Precision, Low Noise FGA™ Voltage References; Temperature Range: -55°C to 125°C; Package: 8-SOIC T&R THREE TERM VOLTAGE REFERENCE, PDSO8
High Voltage Input Precision, Low Noise FGA Voltage References
|
Intersil, Corp.
Intersil Corporation
|
